unisonic technologies co., ltd utt30n06 power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2011 unisonic technologies co., ltd qw-r502-637.a 30a, 60v n-channel power mosfet ? description the utc utt30n06 is a low voltage power mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state re sistance and excellent avalanche characteristics. this power mosfet is usually used in automotive applications of power supplies, high efficient dc to dc converters and battery operated products. ? features * r ds(on) = 40m ? @v gs = 10 v * ultra low gate charge ( typical 20 nc ) * low reverse transfer capacitance ( c rss = typical 80 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing utt30n06l-tn3-r utt30n06g-tn3-r to-252 g d s tape reel UTT30N06L-TA3-T utt30n06g-ta3-t to-220 g d s tube note: pin assignment: g: gate d: drain s: source
utt30n06 power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-637.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v t c = 25c 30 a continuous t c = 100c i d 21.3 a drain current pulsed (note 1) i dm 120 a single pulsed (note 2) e as 300 mj avalanche energy repetitive (note 1) e ar 8 mj peak diode recovery dv/dt (note 3) dv/dt 7.5 v/ns to-220 89 power dissipation to-252 p d 44 w junction temperature t j +150 c operation temperature t opr -55~+150 c storage temperature t stg -55~+150 c notes: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 1. repeativity rating: pulse wi dth limited by junction temperature 2. l=0.66mh, i as =30a, v dd =25v, r g =20 ? , starting t j =25c 3. i sd 50a, di/dt 300a/ s, v dd bv dss , starting t j =25c ? thermal data parameter symbol ratings unit to-220 62 junction to ambient to-252 ja 50 c/w to-220 1.4 junction to case to-252 jc 2.85 c/w
utt30n06 power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-637.a ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 60 v drain-source leakage current i dss v ds = 60 v, v gs = 0 v 10 a forward v gs = 20v, v ds = 0 v 100 na gate-source leakage current reverse i gss v gs = -20v, v ds = 0 v -100 na breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25 0.06 v/ on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs = 10 v, i d = 15 a 32 40 m ? dynamic characteristics input capacitance c iss 800 pf output capacitance c oss 300 pf reverse transfer capacitance c rss v gs = 0 v, v ds = 25 v, f = 1mhz 80 pf switching characteristics turn-on delay time t d(on) 12 ns turn-on rise time t r 79 ns turn-off delay time t d(off) 50 ns turn-off fall time t f v dd = 30v, i d =15 a, v gs =10v (note 1, 2) 52 ns total gate charge q g 20 30 nc gate-source charge q gs 6 nc gate-drain charge q gd v ds = 60v, v gs = 10 v, i d = 24a (note 1, 2) 9 nc source-drain diode ratings and characteristics drain-source diode forward voltage v sd v gs = 0 v, i s = 30a 1.4 v maximum continuous drain-source diode forward current i s 30 a maximum pulsed drain-source diode forward current i sm 120 a reverse recovery time t rr 40 ns reverse recovery charge q rr v gs = 0 v, i s = 30a, di f / dt = 100 a/ s (note 1) 70 c notes: 1. pulse test : pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature.
utt30n06 power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-637.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period peak diode recovery dv/dt waveforms
utt30n06 power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-637.a ? test circuits and waveforms (cont.) switching test circuit switching waveforms gate charge test circuit gate charge waveform d.u.t. r d 10v v ds l v dd t p v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
utt30n06 power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-637.a ? typical characteristics 10 2 10 1 10 0 10 1 10 -1 10 0 drain-source voltage, v ds (v) drain current, i d (a) on-state characteristics 10 2 10 1 10 0 2 gate-source voltage, v gs (v) drain current, i d (a) transfer characteristics 46810 3579 v gs top: 15v 10v 8v 7v 6v 5.5v 5v bottorm: 4.5v 4.5v note: 1. v ds =25v 2. 20s pulse test 1 5 0 2 5 0.0 0 drain current, i d (a) 40 80 100 20 40 60 80 100 on-resistance variation vs. drain current and gate voltage 10 2 10 1 10 0 0.2 source-drain voltage, v sd (v) reverse drain current vs. allowable case temperature 1.6 0.4 0.6 0.8 1.0 1.2 1.4 20 60 120 *note: 1. v gs =0v 2. 250s test 25 150 v gs =10v v gs =20v capacitance (pf) gate-to-source voltage, v gs (v)
utt30n06 power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-637.a ? typical characteristics(cont.) drain-source breakdown voltage, bv dss (normalized) (v) drain-source on-resistance, r ds(on) , (normalized) ( ? ) 10 1 0.1 drain-source voltage, v ds (v) drain current , i d, (a) maximum safe operating 1 100 drain current, i d (a) case temperature, t c ( ) 75 100 150 30 maximum drain current vs. case temperature 0 125 50 25 10 20 10 100 1000 dc operation in this area by r ds (on) *note: 1. t c =25 2. t j =150 3. single pulse 10ms 1ms 100s 0.01 square wave pu lse duration, t 1 (sec) 1 1e-5 1 0.1 0.1 10 0.01 transient thermal response curve 0.02 0.1 0.2 1e-4 1e-3 0.01 *note: 1. z jc (t) = 0.88 /w max. 2. duty factor, d=t1/t2 3. t j -t c =p dm z jc (t) single pulse d=0.5 0.05
utt30n06 power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-637.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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